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HAT2168N Silicon N-Channel MOSFET

HAT2168N Description

HAT2168N Silicon N Channel Power MOS FET Power Switching .

HAT2168N Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 6.3 mΩ typ. (at VGS = 10 V)
* Power Supply for Server and Telecom (Indoor use) Outline RENESAS Package code: PTSP0008DC-A (

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Silicon N-Channel MOSFET Renesas
Renesas HAT2168N-like datasheet