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HAT2160H Silicon N-Channel Power MOSFET

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Description

HAT2160H Silicon N Channel Power MOS FET Power Switching .

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Features

* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 2.1 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0002-0300 Rev.3.00 Sep 26, 2005 1,

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