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HAT2165N Silicon N-Channel Power MOSFET

HAT2165N Description

HAT2165N Silicon N Channel Power MOS FET Power Switching .

HAT2165N Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTSP0008DC-A (Package name: LFPAK-i) 1(S) 2XXX 2(S) 3(S) 8(D) 4(G)

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Silicon N-Channel Power MOSFET Renesas Technology
Renesas Technology HAT2165N-like datasheet