HAF1010RJ P-Channel MOSFET

Renesas

Description

Target Specifications Datasheet HAF1010RJ Silicon P Channel MOS FET Series Power Switching R07DS1361EJ0200 Rev.2.00 Sep 06, 2016 .
This FET has the over temperature shut-down capability sensing to the junction temperature.

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Datasheet Specifications

Part number: HAF1010RJ
Manufacturer: Renesas ↗
File Size: 325.24 KB
Datasheet: HAF1010RJ-Renesas.pdf
Description: P-Channel MOSFET

Features

* Logic level operation to (
* 4 to
* 6 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Built-in the current limitation circuit. High density mounting Power su

HAF1010RJ Distributors

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HAF1010RJ P-Channel MOSFET Renesas

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