HAF1008S, HAF1008 Datasheet - Renesas

HAF1008S P-Channel MOSFET

This FET has the over temperature shut *down capability sensing to the junction temperature. This FET has the built *in over temperature shut *down circuit in the gate area. And this circuit operation to shut *down the gate voltage in case of high junction temperature lik.

HAF1008S Features

* Logic level operation (-4 to -6 V Gate drive)

* High endurance capability against to the short circuit

* Built

* in the over temperature shut

* down circuit

* Latch type shut

* down operation (Need 0 voltage recovery) Outline LDPAK D G Gate resi

HAF1008-Renesas.pdf