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HAF2005 Silicon N Channel MOS FET Series Power Switching

HAF2005 Description

HAF2005 Silicon N Channel MOS FET Series Power Switching ADE-208-688 (Z) Target specification 1st.Edition Nov.1998 This FET has the over temperatur.

HAF2005 Features

* Logic level operation (4 to 6 V Gate drive) High endurance capability against to the short circuit Built
* in the over temperature shut
* down circuit Latch type shut
* down operation (Need 0 voltage recovery) Outline TO
* 220FM D G

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Datasheet Details

Part number
HAF2005
Manufacturer
Hitachi Semiconductor
File Size
31.82 KB
Datasheet
HAF2005_HitachiSemiconductor.pdf
Description
Silicon N Channel MOS FET Series Power Switching

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Silicon Channel MOS FET Series Power Switching Hitachi Semiconductor
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