Datasheet4U Logo Datasheet4U.com

HAF2017S, HAF2017 Silicon N-Channel Power MOS FET

HAF2017S Description

HAF2017(L), HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z)) Rev.2.00 Apr.13.2004 Descriptio.
This FET has the over temperature shutdown capability sensing the junction temperature.

HAF2017S Features

* Logic level operation (4 to 6 V Gate drive)
* High endurance capability against to the short circuit
* Built-in the over temperature shutdown circuit
* Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: HAF2017S, HAF2017. Please refer to the document for exact specifications by model.
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
HAF2017S, HAF2017
Manufacturer
Renesas ↗
File Size
121.57 KB
Datasheet
HAF2017-Renesas.pdf
Description
Silicon N-Channel Power MOS FET
Note
This datasheet PDF includes multiple part numbers: HAF2017S, HAF2017.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

  • HAF2011 - Silicon N Channel MOS FET Series Power Switching (Hitachi Semiconductor)
  • HAF2011L - Silicon N Channel MOS FET Series Power Switching (Hitachi Semiconductor)
  • HAF2011S - Silicon N Channel MOS FET Series Power Switching (Hitachi Semiconductor)
  • HAF2012 - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
  • HAF2012L - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
  • HAF2012S - Silicon N Channel MOS FET Series Power Switching (Renesas Technology)
  • HAF2015RJ - N-Channel MOSFET (Hitachi Semiconductor)
  • HAF2001 - Silicon N Channel MOS FET Series Power Switching (Hitachi Semiconductor)

📌 All Tags

Silicon N-Channel Power MOS FET Renesas
Renesas HAF2017S-like datasheet