HAF2017 Silicon N-Channel Power MOS FET

Renesas

Description

HAF2017(L), HAF2017(S) Silicon N Channel Power MOS FET Power Switching REJ03G0234-0200Z (Previous ADE-208-1637 (Z)) Rev.2.00 Apr.13.2004 Descriptio.
This FET has the over temperature shutdown capability sensing the junction temperature.

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Datasheet Specifications

Part number: HAF2017
Manufacturer: Renesas ↗
File Size: 121.57 KB
Datasheet: HAF2017-Renesas.pdf
Description: Silicon N-Channel Power MOS FET

Features

* Logic level operation (4 to 6 V Gate drive)
* High endurance capability against to the short circuit
* Built-in the over temperature shutdown circuit
* Latch type shutdown operation (Need 0 voltage recovery) Outline D G Gate Resistor Temperature Sensing Circuit

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HAF2017 Silicon N-Channel Power MOS FET Renesas

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