RJK0455DPB Silicon N Channel Power MOS FET

Renesas Technology

Description

www.DataSheet4U.com To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with R.
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

📥 Download Datasheet

RJK0455DPB Datasheet Preview — Preview of RJK0455DPB PDF

Datasheet Specifications

Part number: RJK0455DPB
Manufacturer: Renesas ↗ Technology
File Size: 169.44 KB
Datasheet: RJK0455DPB_RenesasTechnology.pdf
Description: Silicon N Channel Power MOS FET

Features

* High speed switching Low drive current Low on-resistance RDS(on) = 3.1 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* High density mounting REJ03G1878-0200 Rev.2.00 Mar 04, 2010 Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 G 3 12 4

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

RJK0455DPB Distributors

📁 Related Datasheet

RJK0452DPB RJK0406JPE RJK005N03 RJK005N03FRA RJK0230DPA RJK0234DNS

📌 All Tags

RJK0455DPB Silicon Channel Power MOS FET Renesas Technology

Renesas Technology RJK0455DPB-like datasheet