RJK03B9DPA Silicon N Channel Power MOS FET Power Switching

Renesas Technology

Description

Preliminary Datasheet RJK03B9DPA Silicon N Channel Power MOS FET Power Switching .
of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and appl.

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Datasheet Specifications

Part number: RJK03B9DPA
Manufacturer: Renesas ↗ Technology
File Size: 111.85 KB
Datasheet: RJK03B9DPA_RenesasTechnology.pdf
Description: Silicon N Channel Power MOS FET Power Switching

Features

* High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 8.3 m typ. (at VGS = 10 V)
* Pb-free
* Halogen-free
* REJ03G1791-0320 Rev.3.20 May 12, 2010 Outline RENESAS Package code: PWSN0008DC-A (Package n

Applications

* or use by the military, including but not limited to the development of weapons of mass destruction. Renesas Electronics products and technology may not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable domestic or foreign law

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RJK03B9DPA Silicon Channel Power MOS FET Power Switching Renesas Technology

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