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HAT2119H
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low drive current. • Low on-resistance • Low profile
Outline
RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK )
5 4 G
1 234
5 D
S SS 1 23
REJ03G0176-0300 Rev.3.00
Dec 19, 2006
1, 2, 3 4 5
Source Gate Drain
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3.
HAT2119H Datasheet
