Datasheet4U Logo Datasheet4U.com

HAT2126RP - Silicon N-Channel MOSFET

Features

  • www. DataSheet4U. com.
  • Low on-resistance.
  • Capable of 4.5 V gate drive.
  • High density mounting.
  • Built-in Schottky Barrier Diode Outline HSOP-11 10 11 9 8 7 6 5 34 1 2 1 D 7 8 D D 2 G 3 G 4, 5, 6, 9, 10 , 11 2, 3 1, 7, 8 S S S 9 10 11 Source Gate Drain S S S 4 5 6 MOS1 MOS2 and Schottky Barrier Diode HAT2126RP Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings MOS1 Drain to source voltage Gate to source voltage Drain current Drain peak curren.

📥 Download Datasheet

Datasheet Details

Part number HAT2126RP
Manufacturer Renesas
File Size 301.10 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet HAT2126RP Datasheet

Full PDF Text Transcription

Click to expand full text
To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) www.DataSheet4U.com Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Published: |