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30H10K, 30H10I - 100A 30V N-channel Enhancement Mode Power MOSFET

30H10K Description

30H10I/30H10K 100A 30V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

30H10K Features

* Fast Switching
* Low ON Resistance(Rdson≤5.5mΩ)
* Low Gate Charge(Typical:43nC)
* Low Reverse Transfer Capacitance(Typical:215pF)
* 100% Single Pulse Avalanche Energy Test

30H10K Applications

* Power switching applications
* Inverter management system
* Electric Tools
* Automotive Electronics VDSS = 30V RDS(on) （TYP)= 4mΩ ID = 100A TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Maximum Drian-

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 30H10K, 30H10I. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
30H10K, 30H10I
Manufacturer
ROUM
File Size
847.66 KB
Datasheet
30H10I-ROUM.pdf
Description
100A 30V N-channel Enhancement Mode Power MOSFET
Note
This datasheet PDF includes multiple part numbers: 30H10K, 30H10I.
Please refer to the document for exact specifications by model.

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📌 All Tags

100A 30V N-channel Enhancement Mode Power MOSFET ROUM
ROUM 30H10K-like datasheet