30H10I 100A 30V N-channel Enhancement Mode Power MOSFET

Description

30H10I/30H10K 100A 30V N-channel Enhancement Mode Power MOSFET 1 .
These N-channel Enhanced VDMOSFETs Used advanced trench technology design, provided excellent RDSON and low gate charge.

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Datasheet Specifications

Part number: 30H10I
Manufacturer: ROUM
File Size: 847.66 KB
Datasheet: 30H10I-ROUM.pdf
Description: 100A 30V N-channel Enhancement Mode Power MOSFET

Features

* Fast Switching
* Low ON Resistance(Rdson≤5.5mΩ)
* Low Gate Charge(Typical:43nC)
* Low Reverse Transfer Capacitance(Typical:215pF)
* 100% Single Pulse Avalanche Energy Test

Applications

* Power switching applications
* Inverter management system
* Electric Tools
* Automotive Electronics VDSS = 30V RDS(on) （TYP)= 4mΩ ID = 100A TO-252B TO-251B 4 Electrical Characteristics 4.1 Absolute Maximum Rating(Tc=25℃,unless otherwise noted) Parameter Symbol Maximum Drian-

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📁 Related Datasheet

30H10K 30H150 30H80 30H80A 30H80G 30HC

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30H10I 100A 30V N-channel Enhancement Mode Power MOSFET ROUM

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