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30H80 - N-Channel Enhancement Mode MOSFET

30H80 Description

30H80/30H80A N-Channel Enhancement Mode MOSFET .

30H80 Features

* 30H80 (TO-220) / 30H80A (TO-262)
* 30V/80A, RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V
* Super High Dense Cell Design
* Reliable and Rugged
* Avalanche Rated

30H80 Applications

* Power Management in Desktop Computer or DC/DC Converters. D G S N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature R

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Datasheet Details

Part number
30H80
Manufacturer
FNK
File Size
868.48 KB
Datasheet
30H80-FNK.pdf
Description
N-Channel Enhancement Mode MOSFET

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N-Channel Enhancement Mode MOSFET FNK
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