Description
30H80/30H80A N-Channel Enhancement Mode MOSFET .
Features
* 30H80 (TO-220) / 30H80A (TO-262)
* 30V/80A,
RDS(ON)=7.5mΩ ( ) @ VGS=10V RDS(ON)=10 mΩ ( ) @ VGS=4.5V
* Super High Dense Cell Design
* Reliable and Rugged
* Avalanche Rated
Applications
* Power Management in Desktop Computer or
DC/DC Converters. D
G
S
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS VGSS
TJ TSTG
IS
Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature R