RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER

RFMD

Description

RFHA1025 280W GaN Wideband Pulsed Power Amplifier RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin .
The RFHA1025 is a 50V 280W high power discrete amplifier designed for L-band pulsed radar, air traffic control and surveillance and general purpose br.

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Datasheet Specifications

Part number: RFHA1025
Manufacturer: RFMD
File Size: 939.76 KB
Datasheet: RFHA1025_RFMD.pdf
Description: 280W GaN WIDEBAND PULSED POWER AMPLIFIER

Features

* Wideband Operation: 0.96GHz to 1.215GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100s to 1ms Pulse Width Integrated Matching Components for High Terminal Impedances
* RF IN VG Pin 1 (CUT

Applications

* Using an advanced high power density gallium nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1025 is a matched power transistor packaged in a hermetic, flanged c

RFHA1025 Distributors

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RFHA1025 280W GaN WIDEBAND PULSED POWER AMPLIFIER RFMD

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