Datasheet Specifications
- Part number
- RFHA1000
- Manufacturer
- RF Micro Devices
- File Size
- 976.08 KB
- Datasheet
- RFHA1000_RFMicroDevices.pdf
- Description
- 15W GaN WIDE-BAND POWER AMPLIFIER
Description
www.DataSheet.co.kr RFHA1000 50MHz to 1000MHz, 15 W GaN Wideband Power Amplifier RFHA1000 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package.Features
* VGS Pin 1 Advanced GaN HEMT Technology Output Power of 15W Advanced Heat-Sink Technology 50MHz to 1000MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 41.5dBm Gain 17dBApplications
* such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier deRFHA1000 Distributors
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