RFHA1006 9W GaN WIDEBAND POWER AMPLIFIER

RF Micro Devices

Description

RFHA1006 225MHz to 1215MHz, 9W GaN Wideband Power Amplifier RFHA1006 225MHz TO 1215MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Ca.
The RFHA1006 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general.

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Datasheet Specifications

Part number: RFHA1006
Manufacturer: RF Micro Devices
File Size: 1.66 MB
Datasheet: RFHA1006_RFMicroDevices.pdf
Description: 9W GaN WIDEBAND POWER AMPLIFIER

Features

* VGS Pin 1 Advanced GaN HEMT Technology Output Power of 9W Advanced Heat-Sink Technology 225MHz to 1215MHz Instantaneous Bandwidth Input Internally Matched to 50 28V Operation Typical Performance Output Power 39.5dBm Gain 16dB
* Power Added Efficiency 60% -40°C to 85°C

Applications

* such as wireless infrastructure, RADAR, two way radios and general purpose amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a single amplifier de

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RFHA1006 GaN WIDEBAND POWER AMPLIFIER RF Micro Devices

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