RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER

RF Micro Devices

Description

www.DataSheet.co.kr RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin .
The RFHA1023 is a 36V 225W high power discrete amplifier designed for L-Band pulsed radar, Air Traffic Control and Surveillance and general purpose br.

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Datasheet Specifications

Part number: RFHA1023
Manufacturer: RF Micro Devices
File Size: 347.67 KB
Datasheet: RFHA1023_RFMicroDevices.pdf
Description: 225W GaN WIDE-BAND PULSED POWER AMPLIFIER

Features

* Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50 : Operation Integrated Matching Components for High Terminal Impedances 36V Operation Typical Per

Applications

* Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. The RFHA1023 is a matched power transistor packaged in a hermetic, flanged c

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RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER RF Micro Devices

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