FPD6836P70 Datasheet (RFMD) - LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT

FPD6836P70, LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT

The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimised for low-noise, high-frequency applications.

Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT 9 GaAs pHEMT S

FPD6836P70 Features

* 22dBm Output Power (P1dB)

* 15dB Gain at 5.8GHz

* 0.8dB Noise Figure at 5.8 GHz

* 32dB Output IP3 at 5.8GHz

* 45% Power-Added Efficiency at 5.8GHz

* Usable Gain to 18GHz Applications

* Gain blocks and medium power stages

* WiMax (2GHz