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FPD6836SOT343 HIGH LINEARITY PACKAGED PHEMT

FPD6836SOT343 Description

PRELIMINARY FPD6836SOT343 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT * PERFORMANCE (1850 MHz) * 0.5 dB Noise Figure * 20 dBm .
AND APPLICATIONS The FPD6836SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT).

FPD6836SOT343 Applications

* The FPD6836SOT343 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 µm x 360 µm Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure minimizes parasitics to optimi

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Datasheet Details

Part number
FPD6836SOT343
Manufacturer
Filtronic
File Size
215.98 KB
Datasheet
FPD6836SOT343-Filtronic.pdf
Description
HIGH LINEARITY PACKAGED PHEMT

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HIGH LINEARITY PACKAGED PHEMT Filtronic
Filtronic FPD6836SOT343-like datasheet