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PMEN2P7002S - P-Channel MOSFETs

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • -60V,-0.3A, RDS(ON) =4Ω@VGS=-10V.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.
  • G-S ESD Protection Diode Embedded D.

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Datasheet Details

Part number PMEN2P7002S
Manufacturer Potens semiconductor
File Size 753.63 KB
Description P-Channel MOSFETs
Datasheet download datasheet PMEN2P7002S Datasheet
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60V P-Channel MOSFETs PMEN2P7002S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D BVDSS -60V RDSON 4 ID -0.3A Features  -60V,-0.3A, RDS(ON) =4Ω@VGS=-10V  Improved dv/dt capability  Fast switching  Green Device Available  G-S ESD Protection Diode Embedded D Applications G S  Power Management in Notebook Computer  Portable Equipment and Battery Powered G Systems.
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