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PMEN2423S - P-Channel MOSFET

Description

These P-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

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Datasheet Details

Part number PMEN2423S
Manufacturer Potens semiconductor
File Size 497.12 KB
Description P-Channel MOSFET
Datasheet download datasheet PMEN2423S Datasheet

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20V P-Channel MOSFETs PMEN2423S General Description These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS RDSON ID -20V 43mΩ -4A  -20V,-4A, RDS(ON) =43mΩ@VGS = -4.5V  Low gate charge (typicalQ gd 4.5nC)  G-S ESD Protection Diode Embedded  Fast switching  Green Device Available  Suit for -1.
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