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60V P-Channel MOSFETs
PMEN2P7002S
General Description
These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
BVDSS -60V
RDSON 4
ID -0.3A
Features
-60V,-0.3A, RDS(ON) =4Ω@VGS=-10V Improved dv/dt capability Fast switching Green Device Available G-S ESD Protection Diode Embedded
D Applications
G S
Power Management in Notebook Computer Portable Equipment and Battery Powered
G Systems.
PMEN2P7002S Datasheet
