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PMEN2N7002S - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 60V,0.3A, RDS(ON) =1.6Ω@VGS=10V.
  • Improved dv/dt capability.
  • Fast switching.
  • 100% EAS Guaranteed.
  • Green Device Available.
  • G-S ESD Protection Diode Embedded.

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Datasheet Details

Part number PMEN2N7002S
Manufacturer Potens semiconductor
File Size 581.51 KB
Description N-Channel MOSFETs
Datasheet download datasheet PMEN2N7002S Datasheet

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Full PDF Text Transcription

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60V N-Channel MOSFETs PMEN2N7002S General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS 60V RDSON 1.6Ω ID 0.3A Features  60V,0.3A, RDS(ON) =1.
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