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PMEW2520 - N-Channel MOSFETs

Description

These N-Channel enhancement mode power field effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 20V,6.3A, RDS(ON) 20mΩ@VGS = 4.5V.
  • G-S ESD Diode Embedded.
  • Improved dv/dt capability.
  • Fast switching.
  • Green Device Available.

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Datasheet Details

Part number PMEW2520
Manufacturer Potens semiconductor
File Size 656.99 KB
Description N-Channel MOSFETs
Datasheet download datasheet PMEW2520 Datasheet

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Full PDF Text Transcription

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20V N-Channel MOSFETs PMEW2520 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. TSSOP8 Dual Pin Configuration G2 S2 S2 D1/D2 G1 S1 S1 D1/D2 BVDSS 20V RDSON 20m ID 6.3A Features  20V,6.3A, RDS(ON) 20mΩ@VGS = 4.
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