BF908R Datasheet - Philips

BF908R Dual-gate MOS-FETs

Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. CAUTION The device is supplied in an antistatic package. The gate-source inpu.

BF908R Features

* High forward transfer admittance

* Short channel transistor with high forward transfer admittance to input capacitance ratio

* Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS

* VHF and UHF applications with 12 V supply voltage, such as television tuner

BF908R Datasheet (87.01 KB)