BF9028DND-GE - N-Channel MOSFET

Name: BF9028DND-GE
SKU: BF9028DND-GE-1108464

BYD

Datasheet Details

The BF9028DND-GE is a dual N-channel MOS Field Effect Transistor, which is applied to electronic systems as a power switch.

z VDS=24 V z ID=6 A z Low on-state resistance RDS (on) < 19.5 mΩ (VGS=4.5V) RDS (on) < 20 mΩ (VGS=3.8V) RDS (on) < 26 mΩ (VGS=3.0V) RDS (on) < 30 mΩ (VGS=2.5V) Absolute Maximum Ratings(TC = 25℃) Symbol Parameter VDS Drain-Source Voltage ID Drain Current(continuous)at Tc=25℃ IDM Drain Current (pulsed) VGS Gate-Source Voltage PD Power Dissipation TC = 25°C TJ,Tstg Operating and Storage Temperature Range (Note a) Value 24 6 24 ±10 2.0 -55 to +150 Unit V A A V W ℃ Ordering Information Part.

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Published: Apr 12, 2017 |