BF908WR - N-channel dual-gate MOS-FET

NXP

BF908WR Description

DISCRETE SEMICONDUCTORS DATA SHEET BF908WR N-channel dual-gate MOS-FET Preliminary speciﬁcation File under Discrete Semiconductors, SC07 1995 Apr 25.
Depletion type field effect transistor in a plastic microminiature SOT343R package.

BF908WR Features

* High forward transfer admittance
* Short channel transistor with high forward transfer admittance to input capacitance ratio

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Datasheet Details

Part number: BF908WR
Manufacturer: NXP ↗
File Size: 103.19 KB
Datasheet: BF908WR_PhilipsSemiconductors.pdf
Description: N-channel dual-gate MOS-FET

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N-channel dual-gate MOS-FET NXP

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