2SK665 - N-Channel MOSFET

Panasonic Semiconductor

Datasheet Details

Part number	2SK665
Manufacturer	Panasonic Semiconductor
File Size	35.77 KB
Description	N-Channel MOSFET
Datasheet	2SK665_PanasonicSemiconductor.pdf

q High-speed switching q Small drive current owing to high input inpedance q High electrostatic breakdown voltage 0.65 0.425 1.25±0.1 0.425 1 2.0±0.2 1.3±0.1 0.65 3 2 0.9±0.1 Parameter Drain to Source voltage Gate to Source voltage Drain current Max drain current Allowable power dissipation Channel temperature Storage temperature Symbol VDS VGSO ID IDP PD Tch Tstg Ratings 20 8 100 200 150 150.
55 to +150 Unit V V mA mA mW °C °C 0.7±0.1 0 to 0.1 0.2±0.1 1: Gate 2: Source.

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Published: Mar 30, 2005 |