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2SK660 - N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

NEC

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Datasheet Details

Part number	2SK660
Manufacturer	NEC
File Size	38.33 KB
Description	N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
Datasheet	2SK660_NEC.pdf

2SK660 Product details

Description

The 2SK660 is suitable for converter of ECM.

Features

Compact package.
High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA).
Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = 1 MHz).
Includes diode and high resistance at G - S.

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Published: Oct 8, 2005 |