Datasheet4U Logo Datasheet4U.com

RHRG30120 - Hyperfast Diode

Description

characteristics.

It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction.

Features

  • Hyperfast Recovery trr = 85 ns (@ IF = 30 A).
  • Max Forward Voltage, VF = 3.2 V (@ TC = 25°C).
  • 1200 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • This Device is Pb.
  • Free and is RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
RHRG30120 Ultrafast Rectifier INCHANGE
RHRG30120 30A 1200V Hyperfast Diode Fairchild Semiconductor
RHRG30120 30A 1200V Hyperfast Diode Intersil Corporation
RHRG30120 1200Volt SwitchMode Single Fast Recovery Epitaxial Diode Thinki Semiconductor
RHRG30120CC 30A 1200V Hyperfast Dual Diode Intersil Corporation

Other Datasheets by onsemi

Part Number Description
RHRG3040 Hyperfast Diode
RHRG3060 Hyperfast Diode
RHRG3060-F085 Hyperfast Rectifier
RHRG5060 Hyperfast Diode
RHRG75120 Hyperfast Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Hyperfast Diode 30 A, 1200 V RHRG30120 Description The RHRG30120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • Hyperfast Recovery trr = 85 ns (@ IF = 30 A) • Max Forward Voltage, VF = 3.
Published: |