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RHRG3060 - Hyperfast Diode

This page provides the datasheet information for the RHRG3060, a member of the RHRG3040 Hyperfast Diode family.

Datasheet Summary

Description

characteristics.

It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction.

Features

  • Hyperfast Recovery trr = 45 ns (@ IF = 30 A).
  • Max Forward Voltage, VF = 2.1 V (@ TC = 25°C).
  • 400 V, 600 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – RHRG3060

Datasheet Details

Part number RHRG3060
Manufacturer ON Semiconductor
File Size 384.43 KB
Description Hyperfast Diode
Datasheet download datasheet RHRG3060 Datasheet
Additional preview pages of the RHRG3060 datasheet.

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Full PDF Text Transcription

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Hyperfast Diode 30 A, 400 V − 600 V RHRG3040, RHRG3060 Description The RHRG3040, RHRG3060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • Hyperfast Recovery trr = 45 ns (@ IF = 30 A) • Max Forward Voltage, VF = 2.
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