Datasheet4U Logo Datasheet4U.com

RHRG5060 - Hyperfast Diode

Datasheet Summary

Description

characteristics.

It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction.

Features

  • Hyperfast Recovery ( trr = 50 ns (@ IF = 50 A ).
  • Max Forward Voltage( VF = 2.1 V (@ TC = 25 °C ).
  • 600 V Reverse Voltage and High Reliability.
  • Avalanche Energy Rated.
  • This Device is Pb.
  • Free and is RoHS Compliant.

📥 Download Datasheet

Datasheet preview – RHRG5060

Datasheet Details

Part number RHRG5060
Manufacturer ON Semiconductor
File Size 355.75 KB
Description Hyperfast Diode
Datasheet download datasheet RHRG5060 Datasheet
Additional preview pages of the RHRG5060 datasheet.

📁 Similar Datasheet

  • RHRG5060 - Ultrafast Rectifier (INCHANGE)
  • RHRG5060 - Hyperfast Diode (Fairchild Semiconductor)
  • RHRG5060 - 50A/ 600V Hyperfast Diode (Intersil Corporation)
  • RHRG5060 - (RHRG5040 - RHRG5060) Hyperfast Diodes (Harris Semiconductor)
  • RHRG5060_F085 - Hyperfast Rectifier (Fairchild Semiconductor)
  • RHRG50100 - 50A/ 1000V Hyperfast Diode (Intersil Corporation)
  • RHRG50120 - 50A/ 1200V Hyperfast Diode (Intersil Corporation)
  • RHRG5040 - (RHRG5040 - RHRG5060) Hyperfast Diodes (Harris Semiconductor)
  • RHRG5050 - (RHRG5040 - RHRG5060) Hyperfast Diodes (Harris Semiconductor)
  • RHRG15100CC - 15A/ 1000V Hyperfast Dual Diode (Intersil Corporation)
Other Datasheets by ON Semiconductor

Full PDF Text Transcription

Click to expand full text
Hyperfast Diode 50 A, 600 V RHRG5060 Description The RHRG5060 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended to be used as freewheeling/ clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. Features • Hyperfast Recovery ( trr = 50 ns (@ IF = 50 A ) • Max Forward Voltage( VF = 2.
Published: |