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RHRG3060-F085 - Hyperfast Rectifier

Datasheet Summary

Description

The RHRG3060

characteristics (trr < 45 ns).

implanted epitaxial planar construction.

Features

  • High Speed Switching (trr = 45 ns(Typ. ) @ IF = 30 A).
  • Low Forward Voltage (VF = 1.64 V(Typ. ) @ IF = 30 A).
  • Avalanche Energy Rated.
  • AEC.
  • Q101 Qualified and PPAP Capable.
  • This Device is Pb.
  • Free.

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Datasheet preview – RHRG3060-F085

Datasheet Details

Part number RHRG3060-F085
Manufacturer ON Semiconductor
File Size 5.17 MB
Description Hyperfast Rectifier
Datasheet download datasheet RHRG3060-F085 Datasheet
Additional preview pages of the RHRG3060-F085 datasheet.

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Full PDF Text Transcription

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Hyperfast Rectifier 30 A, 600 V RHRG3060-F085 Description The RHRG3060−F085 is a hyperfast diode with soft recovery characteristics (trr < 45 ns). It has half the recovery time of ultrafast diode and is of silicon nitride passivated ion−implanted epitaxial planar construction. This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of automotive switching power supplies and other power switching automotive applications. Its low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Features • High Speed Switching (trr = 45 ns(Typ.) @ IF = 30 A) • Low Forward Voltage (VF = 1.64 V(Typ.
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