FDS6699S - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDS6699S
Manufacturer	ON Semiconductor
File Size	197.93 KB
Description	N-Channel MOSFET
Datasheet	FDS6699S-ONSemiconductor.pdf

FDS6699S Product details

Description

The FDS6699S is designed to replace a single SO 8 MOSFET and Schottky diode in synchronous DC:DC power supplies.This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge.The FDS6699S includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology.

Features

21 A, 30 V.
Max RDS(on) = 3.6 mW at VGS = 10 V.
Max RDS(on) = 4.5 mW at VGS = 4.5 V.
Includes SyncFET Schottky Body Diode.
High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching.
High Power and Current Handling Capability.
100% RG (Gate Resistance) Tested.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Dec 25, 2023 |