FDS6612A - N-Channel MOSFET

Description

and yet maintain superior switching performance.

Features

• 8.4 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.5 V.
• Fast switching speed.
• Low gate charge.
• High performance trench technology for extremely low RDS(ON).
• High power and current handling capability DDDD DD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
• Continuous.
• Pulsed (Note 1.