FDS6612A - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDS6612A
Manufacturer	ON Semiconductor
File Size	928.39 KB
Description	N-Channel MOSFET
Datasheet	FDS6612A-ONSemiconductor.pdf

FDS6612A Product details

Description

This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.

Features

8.4 A, 30 V. RDS(ON) = 22 mΩ @ VGS = 10 V RDS(ON) = 30 mΩ @ VGS = 4.5 V.
Fast switching speed.
Low gate charge.
High performance trench technology for extremely low RDS(ON).
High power and current handling capability DDDD DD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.
Pulsed (Note 1.

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Published: Dec 25, 2023 |