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FDS6676AS - N-Channel MOSFET

Description

The FDS6676AS is designed to replace a single SO

and Schottky diode in synchronous DC:DC power supplies.

This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Features

  • 14.5 A, 30 V.
  • RDS(ON) Max = 6.0 mW at VGS = 10 V.
  • RDS(ON) Max = 7.25 mW at VGS = 4.5 V.
  • Includes SyncFET Schottky Body Diode.
  • Low Gate Charge (45 nC Typical).
  • High Performance Trench Technology for Extremely Low RDS(ON) and Fast Switching.
  • High Power and Current Handling Capability.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Datasheet Details

Part number FDS6676AS
Manufacturer onsemi
File Size 263.76 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS6676AS Datasheet

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Full PDF Text Transcription

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SyncFETt – N-Channel, POWERTRENCH) 30 V FDS6676AS, FDS6676AS-G General Description The FDS6676AS is designed to replace a single SO−8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6676AS includes an integrated Schottky diode using onsemi’s monolithic SyncFET technology. Features • 14.5 A, 30 V ♦ RDS(ON) Max = 6.0 mW at VGS = 10 V ♦ RDS(ON) Max = 7.25 mW at VGS = 4.
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