FDS6673BZ-F085 - P-Channel MOSFET

ON Semiconductor

Datasheet Details

Max rDS(on) = 7.8mΩ, VGS = -10V, ID = -14.5A This P-Channel MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state.
Max rDS(on) = 12mΩ, VGS = -4.5V, ID = -12A.
Extended VGS range (-25V) for battery.

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Published: Sep 30, 2020 |