FDMC15N06 Datasheet (ON Semiconductor)

FDMC15N06, N-Channel MOSFET

These N *Channel power MOSFETs are manufactured using the innovative UItraFET process.

This advanced process technology achieves the lowest possible on *resistance per silicon area, resulting in outstanding performance.

This device is capable of withstanding high energy in the avalanch

FDMC15N06 Features

* RDS(on) = 75 mW (Typ.) @ VGS = 10 V, ID = 15 A

* 100% Avalanche Tested

* These Device is Pb

* Free and RoHS Compliant DATA SHEET www.onsemi.com WDFN8 3.3X3.3, 0.65P CASE 511DQ D5 D6 D7 D8 4G 3S 2S 1S MARKING DIAGRAM ZXYKK 15N06 Z = Assembly Plant Code XY = Date