Datasheet Details
| Part number | FDMC2610 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 389.96 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Datasheet |
 FDMC2610_FairchildSemiconductor.pdf
|
| Part number | FDMC2610 |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| File Size | 389.96 KB |
| Description | N-Channel UltraFET Trench MOSFET |
| Datasheet |
FDMC2610_FairchildSemiconductor.pdf
|
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. Max rDS(on) = 200mΩ at VGS = 10V, ID = 2.2A Max rDS(on) = 215mΩ at VGS = 6V, ID = 1.5A Low Profile - 1mm max in a MicroFET 3.3 x 3.3 mm RoHS Compliant tm Application DC - DC Conversion Bottom Top 5 6 7 8 D D D D 5 6 7 G S S S 4 3 2 1 4 3 2 1 8 MLP 3.3x3.3 MOSFET Maximu
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