FDMC007N08LCDC 80V 64A N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, Shielded Gate, POWERTRENCH) 80 V, 64 A, 6.8 mW FDMC007N08LCDC General .
This N-Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.

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Datasheet Specifications

Part number: FDMC007N08LCDC
Manufacturer: ON Semiconductor ↗
File Size: 471.43 KB
Datasheet: FDMC007N08LCDC-ONSemiconductor.pdf
Description: 80V 64A N-Channel MOSFET

Features

* Shielded Gate MOSFET Technology
* Max RDS(on) = 6.8 mW at VGS = 10 V, ID = 22 A
* Max RDS(on) = 11.1 mW at VGS = 4.5 V, ID = 18 A
* 5 V Drive Capable
* 50% Lower Qrr than Other MOSFET Suppliers
* Lowers Switching Noise/EMI
* MSL1 Robust Packa

Applications

* Primary DC-DC MOSFET
* Synchronous Rectifier in DC-DC and AC-DC
* Motor Drive
* Solar MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Symbol Parameter Value Unit VDS Drain to Source Voltage 80 V VGS Gate to Source Voltage ±20 V ID Drain Current:

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FDMC007N08LCDC 80V 64A N-Channel MOSFET ON Semiconductor

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