FDMC007N08LC - N-Channel MOSFET

ON Semiconductor

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Datasheet Details

Part number	FDMC007N08LC
Manufacturer	ON Semiconductor
File Size	415.19 KB
Description	N-Channel MOSFET
Datasheet	FDMC007N08LC-ONSemiconductor.pdf

FDMC007N08LC Product details

Description

This N Channel MV MOSFET is produced using onsemi’s advanced POWERTRENCH process that incorporates Shielded Gate technology.This process has been optimized to minimise on state resistance and yet maintain superior switching performance with best in class soft body diode.

Features

Shielded Gate MOSFET Technology.
Max RDS(on) = 7.0 mW at VGS = 10 V, ID = 21 A.
Max RDS(on) = 10.4 mW at VGS = 4.5 V, ID = 17 A.
5 V Drive Capable.
50% Lower Qrr than Other MOSFET Suppliers.
Lowers Switching Noise / EMI.
MSL1 Robust Package Design.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and RoHS Compliant.

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Published: Nov 3, 2024 |