BUL44D2 - NPN Transistor

ON Semiconductor

Datasheet Details

Low Base Drive Requirement.
High Peak DC Current Gain (55 Typical) @ IC = 100 mA.
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread.
Integrated Collector.
Emitter Free Wheeling Diode.
Fully Characterized and Guaranteed Dynamic VCE(sat).
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads POWER.

📁 BUL44D2 Similar Datasheet

BUL44 - NPN Transistor (Motorola Inc)
BUL44F - NPN Transistor (Motorola Inc)
BUL416 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR (STMicroelectronics)
BUL416T - NPN Transistor (INCHANGE)
BUL43B - NPN Transistor (Motorola Inc)
BUL45 - NPN Transistor (Motorola Inc)
BUL45D2 - NPN Transistor (Motorola Inc)
BUL45F - NPN Transistor (Motorola Inc)

Other Datasheets by ON Semiconductor

Published: Mar 23, 2005 |