BUL45D2G - Bipolar NPN Power Transistor

ON Semiconductor

Datasheet Details

Part number	BUL45D2G
Manufacturer	ON Semiconductor
File Size	380.48 KB
Description	Bipolar NPN Power Transistor
Datasheet	BUL45D2G-ONSemiconductor.pdf

Low Base Drive Requirement.
High Peak DC Current Gain.
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread.
Integrated Collector.
Emitter Free Wheeling Diode.
Fully Characterized and Guaranteed Dynamic VCE(sat).
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads.
These Devices are Pb.
Free and are RoHS Compliant.

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Published: Jun 29, 2022 |