BUL45D2 - NPN Transistor

Motorola Inc

Datasheet Details

Low Base Drive Requirement.
High Peak DC Current Gain (55 Typical) @ IC = 100 mA.
Extremely Low Storage Time Min/Max Guarantees Due to the H2BIP Structure which Minimizes the Spread.
Integrated Collector.
Emitter Free Wheeling Diode.
Fully Characterized and Guaranteed Dynamic VCE(sat).
“6 Sigma” Process Providing Tight and Reproductible Parameter Spreads It’s characteristics make it also suitable for PFC.

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Published: Mar 23, 2005 |