BUL45G - NPN Silicon Power Transistor

ON Semiconductor

Datasheet Details

Part number	BUL45G
Manufacturer	ON Semiconductor
File Size	373.12 KB
Description	NPN Silicon Power Transistor
Datasheet	BUL45G-ONSemiconductor.pdf

Improved Efficiency Due to:  Low Base Drive Requirements (High and Flat DC Current Gain hFE)  Low Power Losses (On--State and Switching Operations)  Fast Switching: tfi = 100 ns (typ) and tsi = 3.2 ms (typ)  @ IC = 2.0 A, IB1 = IB2 = 0.4 A.
Full Characterization at 125C.
Tight Parametric Distributions Consistent Lot--to--Lot.
These Devices are Pb--Free and are RoHS Compliant.

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Published: Jun 29, 2022 |