BSS123 - N-Channel Logic Level Enhancement Mode Field Effect Transistor

ON Semiconductor

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Datasheet Details

Part number	BSS123
Manufacturer	ON Semiconductor
File Size	215.50 KB
Description	N-Channel Logic Level Enhancement Mode Field Effect Transistor
Datasheet	BSS123-ONSemiconductor.pdf

BSS123 Product details

Description

These N Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.These products have been designed to minimize on state resistance while provide rugged, reliable, and fast switching performance.

Features

0.17 A, 100 V.
RDS(on) = 6 W @ VGS = 10 V.
RDS(on) = 10 W @ VGS = 4.5 V.
High Density Cell Design for Extremely Low RDS(on).
Rugged and Reliable.
Compact Industry Standard SOT.
23 Surface Mount Package.
This Device is Pb.
Free and Halogen Free DATA SHEET www. onsemi. com D G S SOT.
23.
3 CASE 318.
08.

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Published: Jul 8, 2019 |