BSS138 Datasheet (ON Semiconductor)

BSS138, N-Channel MOSFET

These N *Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

These products have been designed to minimize on *state resistance while provide rugged, reliable, and fast switching performance.

These products are

BSS138 Features

* 0.22 A, 50 V

* RDS(on) = 3.5 W @ VGS = 10 V

* RDS(on) = 6.0 W @ VGS = 4.5 V

* High Density Cell Design for Extremely Low RDS(on)

* Rugged and Reliable

* Compact Industry Standard SOT

* 23 Surface Mount Package

* HBM Class 0A, MM Class M